?2002 fairchild semiconductor corporation february 2002 isl9v5036s3s / isl9v5036p3 rev. b, february 2002 isl9v5036s3s / isl9v5036p3 device maximum ratings t a = 25c unless otherwise noted symbol parameter ratings units bv cer collector to emitter breakdown voltage (i c = 1 ma) 390 v bv ecs emitter to collector voltage - reverse battery condition (i c = 10 ma) 24 v e scis25 at starting t j = 25c, i scis = 38.5a, l = 670 hy 500 mj e scis150 at starting t j = 150c, i scis = 30a, l = 670 hy 300 mj i c25 collector current continuous, at t c = 25c, see fig 9 46 a i c110 collector current continuous, at t c = 110c, see fig 9 31 a v gem gate to emitter voltage continuous 10 v p d power dissipation total t c = 25c 200 w power dissipation derating t c > 25c 1.33 w/c t j operating junction temperature range -40 to 175 c t stg storage junction temperat ure range -40 to 175 c t l max lead temp for soldering (leads at 1.6mm from case for 10s) 300 c t pkg max lead temp for soldering (package body for 10s) 260 c esd electrostatic di scharge volt age at 100pf, 1500 ? 4kv isl9v5036s3s / isl9v5036p3 ecospark tm 500mj , 360v, n-channel ignition igbt general description the isl9v5036s3s and isl9v5036p3 are the next generation igbts that offer outstanding scis capabilit y in the d2 -pak (to- 263) and to-220 plastic package. these devices are intended for use in automotive ignition circuits, specifically as coil drivers. internal diodes provide voltage clamping without the need for external components. ecospark? devices can be custom made to spe cific clamp voltages. contact your nearest fairchild sales office for more information. formerly developmental type 49443 applications automotive ignition coil driver circuits coil- on plug applications features industry standard d-pak package scis energy = 500mj at t j = 25 o c logic level gate drive package jedec to-263 collector (flange) e g d2-pak gate collector emitter r 2 r 1 symbol collector (flange) jedec to-220ab
?2002 fairchild semiconductor corporation isl9v5036s3s / isl9v5036p3 rev. b, february 2002 isl9v5036s3s / isl9v5036p3 package marking and ordering information electrical characteristics t a = 25c unless otherwise noted off state characteristics on state characteristics dynamic characteristics switching characteristics thermal characteristics device marking device package reel size tape width quantity v5036s isl9v5036s3st to-263ab 330mm 24mm 800 units v5036s isl9v5036s3s to-263ab tube n/a 50 units v5036p isl9v5036p3 to-220ab tube n/a 50 units symbol parameter test conditions min typ max units bv cer collector to emitter breakdown voltage i c = 2ma, v ge = 0, r g = 1k ?, see fig. 15 t j = -40 to 150c 330 360 390 v bv ces collector to emitter breakdown voltage i c = 10ma, v ge = 0, r g = 0 , see fig. 15 t j = -40 to 150c 360 390 420 v bv ecs emitter to collector breakdown voltage i c = -75ma, v ge = 0v, t c = 25c 30 - - v bv ges gate to emitter breakdown voltage i ges = 2ma 12 14 - v i cer collector to emitter leakage current v cer = 250v, r g = 1k ?, see fig. 11 t c = 25c - - 25 a t c = 150c - - 1 ma i ecs emitter to collector leakage current v ec = 24v, see fig. 11 t c = 25c - - 1 ma t c = 150c - - 40 ma r 1 series gate resistance - 75 - ? r 2 gate to emitter resistance 10k - 30k ? v ce(sat) collector to emitter saturation voltage i c = 10a, v ge = 4.0v t c = 25c, see fig. 4 - 1.17 1.60 v v ce(sat) collector to emitter saturation voltage i c = 15a, v ge = 4.5v t c = 150c - 1.50 1.80 v q g(on) gate charge i c = 10a, v ce = 12v, v ge = 5v, see fig. 14 -32-nc v ge(th) gate to emitter threshold voltage i c = 1.0ma, v ce = v ge, see fig. 10 t c = 25c 1.3 - 2.2 v t c = 150c 0.75 - 1.8 v v gep gate to emitter plateau voltage i c = 10a, v ce = 12v -3.0- v t d(on)r current turn-on delay time-resistive v ce = 14v, r l = 1 ?, v ge = 5v, r g = 1k ? t j = 25c, see fig. 12 -0.74s t rr current rise time-resistive - 2.1 7 s t d(off)l current turn-off delay time-inductive v ce = 300v, r l = 46 ?, v ge = 5v, r g = 1k ? t j = 25c, see fig. 12 - 4.8 15 s t fl current fall time-inductive - 2.8 15 s scis self clamped inductive switching t j = 25c, l = 670 h, r g = 1k ?, v ge = 5v, see fig. 1 & 2 - - 500 mj r jc thermal resistance junction-case to-263, to-220 - - 0.75 c/w
?2002 fairchild semiconductor corporation isl9v5036s3s / isl9v5036p3 rev. b, february 2002 isl9v5036s3s / isl9v5036p3 typical characteristics figure 1. self clamped inductive switching current vs time in clamp figure 2. self clamped inductive switching current vs inductance figure 3. collector to emitter on-state voltage vs junction temperature figure 4. collector to emitter on-state voltage vs junction temperature figure 5. collector curre nt vs collector emitter on-state voltage figure 6. collector current vs collector emitter on-state voltage t clp , time in clamp (s) i scis , inductive switching current (a) 35 30 10 45 20 25 0 350 300 0250 100 50 150 200 t j = 25c r g = 1k ? , v ge = 5v,v dd = 14v 5 15 40 scis curves valid for v clamp voltages of <390v t j = 150c i scis , inductive switching current (a) 010 2468 l, induct ance (mhy) t j = 150c r g = 1k ? , v ge = 5v,v dd = 14v t j = 25c scis curves valid for v clamp voltages of <390v 35 30 10 45 20 25 0 5 15 40 1.10 1.05 1.00 0.95 0.90 25 -25 17 5 125 75 -50 0 50 100 150 t j , junction temperature (c) v ce , collector to emitter voltage (v) v ge = 4.0v v ge = 3.7v v ge = 5.0v v ge = 8.0v i ce = 6a v ge = 4.5v 0.85 25 -25 17 5 125 75 -50 0 50 100 150 1.25 1.20 1.15 1.10 1.05 v ce , collector to emitter voltage (v) 1.00 t j , junction temperature (c) i ce = 10a v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 20 40 02.0 1.0 3.0 4.0 50 30 10 0 v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v t j = - 40c i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 40 0 50 30 02.0 1.0 3.0 4.0 20 10 v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v t j = 25c
?2002 fairchild semiconductor corporation isl9v5036s3s / isl9v5036p3 rev. b, february 2002 isl9v5036s3s / isl9v5036p3 figure 7. collector to emitter on-state voltage vs collector current figure 8. transfer characteristics figure 9. dc collector current vs case temperature figure 10. threshold voltage vs junction temperature figure 11. leakage current vs junction temperature figure 12. switching time vs junction temperature typical characteristics (continued) i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 0 50 40 02.0 1.0 3.0 4.0 30 t j = 175c v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v 20 10 i ce , collector to emitter current (a) v ge , gate to emitter voltage (v) 2.0 1.0 3.0 4.0 50 40 30 0 2.5 1.5 3.5 4.5 pulse duration = 250s duty cycle < 0.5%, v ce = 5v t j = 25c t j = 175c t j = -40c 20 10 i ce , dc collector current (a) t c , case temperature (c) 50 25 17 5 125 75 50 100 150 40 30 20 10 0 v ge = 4.0v 175 50 100 2.0 1.8 1.6 1.4 1.0 v th , threshold voltage (v) t j junction temperature (c) 150 0 125 1.2 v ce = v ge i ce = 1ma -50 75 25 -25 leakage current (a) t j , junction temperature (c) 1000 10 0.1 10000 100 1 25 -25 175 125 75 -50 0 50 100 150 v ecs = 24v v ces = 300v v ces = 250v 25 17 5 125 75 50 100 150 t j , junction temperature (c) switching time (s) 20 16 12 6 2 i ce = 6.5a, v ge = 5v, r g = 1k ? resistive t off inductive t off resistive t on 10 14 18 8 4
?2002 fairchild semiconductor corporation isl9v5036s3s / isl9v5036p3 rev. b, february 2002 isl9v5036s3s / isl9v5036p3 figure 13. capacitance vs collector to emitter voltage figure 14. gate charge figure 15. breakdown voltage vs series gate resistance figure 16. igbt normalized transient thermal impedance, junction to case typical characteristics (continued) c, capacitance (pf) v ce , collector to emitter voltage (v) 3000 1000 500 1500 010 5 152025 0 c ies frequency = 1 mhz c oes c res 2500 2000 q g , gate charge (nc) v ge , gate to emitter voltage (v) 0 2 4 8 0 10203040 50 3 5 7 6 1 i g(ref) = 1ma, r l = 0.6 ?, t j = 25c v ce = 6v v ce = 12v bv cer , breakdown voltage (v) r g , series gate resistance (k ? ) 360 352 348 356 10 2000 1000 3000 344 100 354 350 358 346 t j = - 40c t j = 25c t j = 175c i cer = 10ma 342 340 z thjc , normalized thermal response t 1 , rectangular pulse duration (s) 10 0 10 -2 10 -1 10 -1 10 -2 10 -3 10 -4 10 0 10 -5 t 1 t 2 p d duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c 0.5 0.2 0.1 0.05 0.02 0.01 single pulse
?2002 fairchild semiconductor corporation isl9v5036s3s / isl9v5036p3 rev. b, february 2002 isl9v5036s3s / isl9v5036p3 test circuits and waveforms figure 17. inductive switching test circuit figure 18. t on and t off switching test circuit figure 19. unclamped energy test circuit figure 20. unclamped energy waveforms r g g c e v ce l pulse gen dut r g = 1k ? + - v ce dut 5v c g e load r or l t p v gs 0.01 ? l i as + - v ce v dd r g dut vary t p to obtain required peak i as 0v v dd v ce bv ces t p i as t av 0
?2002 fairchild semiconductor corporation isl9v5036s3s / isl9v5036p3 rev. b, february 2002 isl9v5036s3s / isl9v5036p3 spice thermal model rev 31 may 2001 isl9v5036s3s / isl9v3036p3 ctherm1 th 6 4.0e-2 ctherm2 6 5 4.8e-4 ctherm3 5 4 4.7e-4 ctherm4 4 3 6.4e-2 ctherm5 3 2 4.9e-2 ctherm6 2 tl 4.9e-2 rtherm1 th 6 6.7e-2 rtherm2 6 5 1.7e-2 rtherm3 5 4 2.5e-1 rtherm4 4 3 6.5e-2 rtherm5 3 2 6.4e-2 rtherm6 2 tl 1.0e-1 saber thermal model saber thermal model isl9v5036s3s / isl9v5036p3 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 4.0e-2 ctherm.ctherm2 6 5 = 4.8e-4 ctherm.ctherm3 5 4 = 4.7e-4 ctherm.ctherm4 4 3 = 6.4e-2 ctherm.ctherm5 3 2 = 4.9e-2 ctherm.ctherm6 2 tl = 4.9e-2 rtherm.rtherm1 th 6 = 6.7e-2 rtherm.rtherm2 6 5 = 1.7e-2 rtherm.rtherm3 5 4 = 2.5e-1 rtherm.rtherm4 4 3 = 6.5e-2 rtherm.rtherm5 3 2 = 6.4e-2 rtherm.rtherm6 2 tl = 1.0e-1 } rtherm4 rtherm6 rtherm5 rtherm3 rtherm2 rtherm1 ctherm4 ctherm6 ctherm5 ctherm3 ctherm2 ctherm1 tl 2 3 4 5 6 th junction case
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